首页|Doping of Thermoelectric Nanostructured Solid Solution Si_(1-x)Ge_x (x ～ 0.3) with Donor and Acceptor Impurities during the Synthesis Process by Spark Plasma Sintering
Doping of Thermoelectric Nanostructured Solid Solution Si_(1-x)Ge_x (x ～ 0.3) with Donor and Acceptor Impurities during the Synthesis Process by Spark Plasma Sintering
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Springer Nature
The work examines the doping of a Si_(1-x)Ge_x solid solution with donor (Sb, P) and acceptor (B) impurities during the synthesis process using electric pulse plasma sintering from powders with submicron particle sizes. The impurity content varied from 0.5 to 2.0 at %. Using the methods of X-ray diffraction, scanning electron microscopy, and X-ray microanalysis, it has been shown that the introduction of an impurity into a solid solution obeys the laws of equilibrium solubility; in particular, when the solubility limit is exceeded, precipitates of the impurity material are formed in the matrix of the material. This fact seems interesting, since electric pulse plasma sintering as a synthesis method is considered nonequilibrium. Studies of thermoelectric properties show that the selection of doping conditions makes it possible to form materials for which, despite the presence of impurity phase inclusions, high values of the thermoelectric figure of merit comparable to the world level of results can be obtained.
Yu. M. Kuznetsov、I. V. Erofeeva、M. V. Dorokhin、M. S. Boldin、A. V. Zdoroveishchev、P. B. Demina、A. V. Boryakov、V. N. Trushin、A. A. Voronin、A. Yu. Zavrazhov、I. N. Nekrylov、D. A. Zdoroveishchev
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Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, 603022 Russia
Voronezh State University, Voronezh, 394018 Russia
NETL
NSTL
Springer Nature
