首页|Temperature-dependent photoluminescence kinetics, photo-and radio-luminescence, and scintillation properties of Y 1.75 Gd 1.25 Al 2.8 Ga 2.2 O 12 :Ce,Mo (Mo=0, 40, 100, 200 ppm) single-crystalline films
Temperature-dependent photoluminescence kinetics, photo-and radio-luminescence, and scintillation properties of Y 1.75 Gd 1.25 Al 2.8 Ga 2.2 O 12 :Ce,Mo (Mo=0, 40, 100, 200 ppm) single-crystalline films
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NETL
NSTL
Elsevier
Photo- and radio-luminescence and scintillation properties of Y1.75Gd1.25Al2.8Ga2.2O12:Ce,Mo (Mo = 0, 40, 100, 200 ppm) single-crystalline films grown by the isothermal liquid phase epitaxy technique and microcrystalline powders (Mo = 0 and 600 ppm) were investigated. The onset temperature at 375 K for luminescence quenching was determined from the temperature-dependent photoluminescence kinetics. Under excitation with 5.5 MeV alpha particles, the Y1.75Gd1.25Al3Ga2O12:Ce,Mo40 exhibited the highest light yield of 8900 photons/MeV and energy resolution of 4.8 % along with scintillation decay times of 115 ns (20.3 %) + 967 ns (29.9 %) + 2825 (49.8 %).