Irradiation response of SiOC under simultaneous helium and silicon ion irradiation

扫码查看

原文链接

NETL
NSTL
Elsevier

外文摘要：SiOC is an amorphous ceramic with superior irradiation stability, making it attractive for applications in high-temperature and high-radiation environments. However, its glassy state stability under the synergistic effects of helium introduction and heavy damage cascades, as expected in a reactor, has not yet been fully assessed. In this study, e-gun evaporated SiOC was simultaneously irradiated using 150 keV helium at a 45-degree incident angle and 1.5 MeV silicon self-ions at a normal incident angle, at room temperature, 300 ℃, and 500 ℃, respectively. For all irradiation conditions, high-resolution transmission electron microscopy and electron diffraction analysis across different depths of the film did not reveal any crystallization. However, Si-enriched precipitates appeared, with fewer precipitates observed at the highest irradiation temperature. Surface scanning electron microscopy showed periodic patterning on the surface of both room temperature and 300 ℃ irradiated samples, but not on the 500 ℃ irradiated sample. The study demonstrates the overall excellent amorphization resistance of SiOC.

外文关键词：

Ion irradiationSiOCAmorphizationHelium implantationDual beam irradiation

作者：

Yongchang Li、Qing Su、Zhihan Hu、Yaqiao Wu、Michael Nastasi、Lin Shao

展开 >

作者单位：

Department of Nuclear Engineering, Texas A&M University, College Station, TX 77845, USA

Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588, USA

Micron School of Materials Science and Engineering, Boise State University, Boise, ID 83725, USA||Center for Advanced Energy Studies, Idaho Falls, ID 83401, USA

出版年：

2025

DOI：

10.1016/j.nimb.2025.165736

Nuclear instruments and methods in physics research, Section B. Beam interactions with materials and atoms

ISSN：0168-583X

年,卷(期)：2025.565(Aug.)

参考文献量21