首页|Crystal and electrical properties of polycrystalline In1_xGaxAs thin films directly formed on insulators
Crystal and electrical properties of polycrystalline In1_xGaxAs thin films directly formed on insulators
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NETL
NSTL
Elsevier
Polycrystalline In1_xGaxAs thin films are promising for high-performance electronics on versatile substrates, including transistors, solar cells, optical communication devices, and infrared sensors. This study examines the effects of composition, deposition temperature, and impurity doping on the grain size, crystal orientation, nanostructure, and electrical properties of In1_xGaxAs layers, utilizing various evaluation methods with machine learning. The results demonstrate that the composition and deposition temperature significantly influence the crystallinity and crystal orientations. Higher In compositions and deposition temperatures yield In1_xGaxAs with enhanced crystallinity. The undoped samples exhibit n-type conduction, which is likely attributable to antisite defects. Increasing the In content and deposition temperature increases the electron concentration and mobility up to 3 x 1018 cm_ 3 and 310 cm2 V_1s_1, respectively. Sn is an effective n-type dopant, facilitating the control of electron concentration within the range of 1017-1019 cm_ 3. These findings offer valuable insights into the application of In1_xGaxAs in high-performance electronic devices.
NETL
NSTL
Elsevier
