首页|The Mechanism of an Etching-Back to Reduce the Density of Cone Defect in STI During the Manufacturing

The Mechanism of an Etching-Back to Reduce the Density of Cone Defect in STI During the Manufacturing

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  • NETL
  • NSTL
  • IEEE
The formation of cone defects is a side effect of the shallow trench isolation (STI) etching process, caused by the redeposition of residue from silicon nitride, silicon dioxide, or byproducts from the etching process. This study aims to explain the mechanism responsible for these defects during STI etching. The utilization of this model can enhance the design for manufacturability by streamlining the manufacturing process, reducing susceptibility to defects and process variations, and ultimately improving the reliability and manufacturability of production.

Manufacturing processesShapeSilicon nitrideProductionIonsReliability engineeringEtchingSiliconPolymersSilicon dioxide

Chih-Cherng Liao、Jian-Hsing Lee、Yu-Jui Chang、Kai-Chuan Kan、Ching-Kuei Shih、Ya-Huei Kuo、Pei-Chen Tsai、Chien-Hsien Song、Ke-Horng Chen

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Research & Development Department, Vanguard International Semiconductor Corporation, Hsinchu, Taiwan

Device Engineering Division, Vanguard International Semiconductor Corporation, Hsinchu, Taiwan

Power Management IC Technology Department 1, Vanguard International Semiconductor Corporation, Hsinchu, Taiwan

Module Development Program, Vanguard International Semiconductor Corporation, Hsinchu, Taiwan

Reliability Assurance Department, Vanguard International Semiconductor Corporation, Hsinchu, Taiwan

Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

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2025

10.1109/TED.2025.3561996

IEEE transactions on electron devices

IEEE transactions on electron devices

ISSN：
年,卷(期)：2025.72(5)
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