Disorder Scattering Induced Large Room Temperature Nonlinear Anomalous Hall Effect in a Semiconductor CdGeAs_2

Seng Huat Lee ¹Takumi Iwaya ²Kosuke Nakayama ²Ting Yong Lim ³Lujin Min ⁴Jingyang He ⁴Yu Wang ¹Venkatraman Gopalan ⁵Zhijian Xie ⁶Xing-Chen Pan ⁷Yong P. Chen ⁸Tay-Rong Chang ⁹Hsin Lin ¹⁰Liang Fu ¹¹Kouji Segawa ¹²Takafumi Sato ¹³Zhiqiang Mao¹⁴

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作者信息

1. 2D Crystal Consortium Materials Research Institute The Pennsylvania State University University Park Pennsylvania 16802,USA||Department of Physics The Pennsylvania State University University Park,PA 16802,USA
2. Department of Physics Graduate School of Science Tohoku University Sendai 980-8578,Japan
3. Department of Electrical and Department of Physics National Cheng Kung University Tainan 70101,Taiwan
4. Department of Physics The Pennsylvania State University University Park,PA 16802,USA||Department of Materials Science and Engineering The Pennsylvania State University University Park,PA 16802,USA
5. Department of Materials Science and Engineering The Pennsylvania State University University Park,PA 16802,USA
6. Department of Electrical and Computer Engineering North Carolina Agriculture and Technical State University Greensboro,NC27411,USA
7. Advanced Institute for Materials Research(WPI-AIMR) Tohoku University Sendai 980-8577,Japan
8. Advanced Institute for Materials Research(WPI-AIMR) Tohoku University Sendai 980-8577,Japan||Department of Physics and Astronomy Elmore Family School of Electrical and Computer Engineering Birck Nanotechnology Center Purdue Quantum Science and Engineering Institute Purdue University West Lafayette,IN 47906,USA||Institute for Physics and Astronomy and Villum Center for Hybrid Quantum Materials and Devices Aarhus University Aarhus-C 8000,Denmark
9. Department of Electrical and Department of Physics National Cheng Kung University Tainan 70101,Taiwan||Center for Quantum Frontiers of Research and Technology(QFort) Tainan 70101,Taiwan||Physics Division National Center for Theoretical Sciences Taipei 10617,Taiwan
10. Institute of Physics Academia Sinica Taipei 115201,Taiwan
11. Department of Physics Massachusetts Institute of Technology Cambridge,MA 02139,USA
12. Department of Physics Kyoto Sangyo University Kyoto 603-8555,Japan
13. Department of Physics Graduate School of Science Tohoku University Sendai 980-8578,Japan||Advanced Institute for Materials Research(WPI-AIMR) Tohoku University Sendai 980-8577,Japan
14. 2D Crystal Consortium Materials Research Institute The Pennsylvania State University University Park Pennsylvania 16802,USA||Department of Physics The Pennsylvania State University University Park,PA 16802,USA||Department of Materials Science and Engineering The Pennsylvania State University University Park,PA 16802,USA
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Abstract

The nonlinear Hall effect (NLHE) with time-reversal symmetry has emerged as a transformative phenomenon within the Hall effect family, attracting significant interest due to its profound implications for both fundamental physics and technological applications. While prior studies have predominantly focused on NLHE in 2D materials, advancements in practical applications have been constrained by low operating temperatures and limited responsivity, typically below 10~(-4) m/V. Achieving significant responsivity at room temperature (RT) in 3D systems has proven challenging, particularly for scattering-induced NLHE. Here, the discovery of disorder scattering-induced NLHE in chalcopyrite-type CdGeAs_2 bulk single crystals is reported, demonstrating a remarkable responsivity of up to 10~(-3) m/V at RT. The studies reveal that NLHE not only facilitates ac-driven second harmonic and rectification Hall responses but also induces an exceptionally large anomalous Hall angle. Through band structure measurements by ARPES, DFT calculations, as well as symmetry and nonlinear Hall conductivity scaling analyses, disorder scattering is identified as the dominant mechanism for the NLHE in CdGeAs_2. Leveraging the observed strong responsivity of NLHE at RT, its broadband electronic frequency mixing capability in the MHz range is further demonstrated. This work sets the foundation for integrating scatteringinduced NLHE in 3D materials into very high-frequency mixing technologies.

Key words

CdGeAs_2/frequency mixing/nonlinear hall effect/semiconductor

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出版年

2026

Advanced Materials

ISSN：0935-9648

参考文献量60

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