首页|High-pressure high-temperature industrial preparation of micron-sized diamond single crystals with silicon-vacancy colour centres
High-pressure high-temperature industrial preparation of micron-sized diamond single crystals with silicon-vacancy colour centres
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NSTL
Elsevier
? 2022 Elsevier LtdNegatively charged silicon-vacancy (SiV?) colour centres are considered to be promising room-temperature single-photon sources. The controlled preparation of high-grade industrial diamonds containing a certain amount of SiV? colour centres remains a significant technical challenge. Herein, micron-sized industrial-grade diamonds containing different concentrations of SiV? colour centres were prepared by adjusting the doping amount of Si powder under the pressure conditions of 5.0–5.2 GPa and temperatures of 1420–1500 °C. Al was used as the nitrogen getter in FeNiCo?C systems through the diamond film growth method (FGM). The results show that the intensity of the SiV? colour centres in synthesized diamond increases with increases in the Si doping amount. It has also been proved that nitrogen impurities inhibit the formation of SiV? colour centres in diamond. In addition, the diamond Raman peak positions exhibit a redshift (from 1330.88 cm?1 to 1329.55 cm?1), and an increase in the Raman full width at half maximum (FWHM) (from 4.78 cm?1 to 5.17 cm?1), indicating that Si enters the diamond lattice, but the diamond crystals still have a single sp3 structure. Our research provides a fast, efficient and low-cost method for the controlled batch preparation of industrial-grade diamond containing SiV? colour centres.
DiamondHigh pressure and high temperatureNitrogen getterPhotoluminescenceSiV? center
Wang Q.、Lai S.、Wan B.、Jia X.、Shen W.、Zhang Z.、Fang C.、Zhang Y.、Chen L.
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Key Laboratory of Material Physics of Ministry of Education School of Physics and Microelectronics Zhengzhou University
NSTL
Elsevier
