High-energy ball-milling constructing P-doped g-C3N4/MoP heterojunction with Mo-N bond bridged interface and Schottky barrier for enhanced photocatalytic H-2 evolution

Wang, Xuehua ¹Wang, Xianghu ¹Tian, Wenli ¹Meng, Alan ¹Li, Zhenjiang ¹Li, Shaoxiang ¹Wang, Lei ¹Li, Guicun¹

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作者信息

1. Qingdao Univ Sci & Technol
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Abstract

The critical prerequisite for realizing the industrial application of photocatalytic technology lies on developing efficient photocatalyst through reasonable and large-scale modification strategy. Herein, the rapid and solventfree high-energy ball-milling procedure was adopted to modify graphitic carbon nitride (g-C3N4) on a large-scale by phosphorus (P) atom doping and molybdenum phosphide (MoP) decorating. It is confirmed that P doping can introduce a mid-gap state in the band gap of g-C3N4, broadening the light responsive region and enhancing the electrical conductivity of g-C3N4. The Mo-N bond at the interface of P-doped g-C3N4 and MoP acting as electrons "delivery channels" facilitates the charge transfer from P-doped g-C3N4 to MoP, while the Schottky barrier promotes the separation of photocarriers. As a result, the optimized P-doped g-C3N4/MoP photocatalyst performs an improved H-2 evolution rate of 4917.83 mu mol.g(-1).h(-1) and a favorable H-2 production stability. This work offers a replicable prototype on adopting high-energy ball-milling to modify photocatalyst.

Key words

High-energy Ball-milling/g-C3N4/MoN bond/Schottky barrier/Photocatalytic H-2 production/EFFICIENT PHOTOCATALYST/CARBON NITRIDE/NANOSHEETS

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出版年

2022

Applied Catalysis

ISSN：0926-3373

被引量71

参考文献量50

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