Abstract
UVA radiation can survive from the absorption of atmospheric layer and reaches the terrestrial surface, which is harmful to human eyes, blood vessels, and elastic fibers. It is meaningful to detect the UVA radiation precisely. A sensitive, high-detectivity and self-powered UVA detector based on polycrystalline CH3NH3PbCl3/amorphous Ga2O3 hybrid structure is presented in this work. Under zero bias, the rise/decay time of the photodetector are 56/67 ms, and the detectivity reaches up to 5.4 × 1010 Jones. The performance is even superior to most of the reported devices based on CH3NH3PbCl3 single crystal. The heterojunction between amorphous Ga2O3 and CH3NH3PbCl3 accelerates the separation of photon-generated carrier and effectively reduces the recombination. In addition, the high resistivity and low surface roughness of the amorphous Ga2O3 layer also contribute to the improvement of device parameters. This study offers new insights to improve the polycrystalline MAPbCl3 devices by ultra-wide bandgap amorphous semiconductors.
NSTL
Elsevier