首页|UV-laser annealing for improved resistive switching performance and reliability of flexible resistive random-access memory
UV-laser annealing for improved resistive switching performance and reliability of flexible resistive random-access memory
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NSTL
Elsevier
? 2022 Elsevier B.V.Flexible resistive random-access memory (RRAM) has attracted significant attention owing to the strong demand for various flexible electronic memory devices. However, fabricating reliable and flexible RRAM is a significant challenge because of the inherently high thermal sensitivity of plastic substrates. In this study, a high-performance flexible RRAM device was fabricated without deforming a plastic substrate by utilizing a precisely controlled UV laser annealing process. The application of laser annealing in an Al/ZnO/Al flexible RRAM changes the concentration of O Frenkel defect pairs in the ZnO layer and produce a ZnO/Al mixed interface layer with high quality oxygen reservoirs. The higher concentration of O Frenkel defect pairs in the ZnO layer induces electroforming-free process, and the improved characteristics such as crystallinity, morphology, and stoichiometry of the interface area result in stable resistive switching and performance enhancement in the flexible RRAM. The laser-annealed flexible RRAM exhibits a high on/off ratio (~1.07 × 104), high cycling endurance (up to 2.5 ×103 cycles), and low power consumption (4.88 μW in SET state and 1.21 μW in RESET state). Importantly, the performance was maintained at a bending radius of up to 5 mm.
Flexible electronicLaser annealingMixed interface layerResistive random access memory (RRAM)
Han S.W.、Shin M.W.
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School of Integrated Technology College of Engineering Yonsei University
NSTL
Elsevier
