首页|Production and characterization of Tungsten Trioxide nanoparticles on porous silicon as photoconductive detector via pulsed laser deposition
Production and characterization of Tungsten Trioxide nanoparticles on porous silicon as photoconductive detector via pulsed laser deposition
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NSTL
Elsevier
The pulsed laser deposition (PLD) technique has been widely used to prepare and characterize Tungsten Trioxide (WO3) nanoparticles on Porous Silicon (PS) substrate produced on n-type Si (100) wafer using a Nd-YAG laser with a wavelength of 355 nm, a repetition rate of 1 Hz, and various laser ablated energy of 440 mJ, 640 mJ, and 840 mJ at room temperature. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), photoluminescence (PL), Raman spectroscopy, are used to investigate the structural and morphological, electric properties and photodetector of the WO3NPS. In high laser ablated energy of 640 mJ and 840 mJ, the XRD analysis revealed that all of the reflection peaks of WO3 NPS can be triclinic WO3 structure, and they became polycrystalline. The size of surface grains grew larger when the energy pulse was increased. Current-voltage (I-V) measures, the electrical characteristics, like the height of the barrier (phi(B)) and ideality factor (n) of Al/WO(3)NPs/PS/n-Si/Al heterojunction have been determined, as between 1.22 and 4.44 ideality factors. It was found that as the laser energy utilized increases, the photocurrent density decreases. The high responsivity curve from the photodetector device has migrated to the visible area as the energy gap has reduced. When the energy pulse was increased to 800 nm, the quantum efficiency of WO3 NPS photodetectors increased to 89%.
NSTL
Elsevier
