首页|High performance ZnSe sensitized ZnO heterostructures for photo-detection applications
High performance ZnSe sensitized ZnO heterostructures for photo-detection applications
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NSTL
Elsevier
ZnO based heterostructures with metal chalcogenides have gained enormous attention in photonic applications owing to their high absorption coefficient and high photo-response. Several studies have been carried out on ZnO-based photodetectors. In present work, simple facile hydrothermal route was opted for synthesis of ZnO-ZnSe heterostructures. The as-prepared heterostructures were characterized by PXRD, TEM and UV-vis spectroscopy. PXRD showed that there is lattice shrinkage of the ZnO after the heterostructure formation with ZnSe. The DRS and UV-vis data revealed a Type II band alignment of ZnO and ZnSe in the heterostructure which results in the slower recombination of electron-hole pairs after illumination of light. ZnO-ZnSe heterostructures showed wide range absorption spectra and expected to have better photogenerated charge carrier's life time, which will be ideal for the fabrication of photo-detector. The ZnO-ZnSe heterostructures based photodetector produced a fast rise and decay time of 23 and 80 ms; and a high photo-responsivity (91.25 mAW(-1)) indicating importance of ZnO-ZnSe heterostructures for high performance photodetectors. This work demonstrates the instant photo-response with high photo-responsivity which proves it as a potential candidate for optoelectronic devices. (C) 2021 Elsevier B.V. All rights reserved.
NSTL
Elsevier
