首页|Exploring SERS from two-dimensional symmetric gold array fabricated by double exposure laser interference lithography
Exploring SERS from two-dimensional symmetric gold array fabricated by double exposure laser interference lithography
扫码查看
点击上方二维码区域，可以放大扫码查看
原文链接
NSTL
Elsevier
In this paper, the electric field enhancement of a two-dimensional symmetric gold array (2DSGA) fabricated by laser interference lithography (LIL), as a surface-enhanced Raman scattering (SERS) substrate, is thoroughly discussed and analyzed. The structure of 2DSGA is closely related to the exposure time and the thickness of the photoresist. 2DSGA, insensitive to the polarization of incident light, has a high enhancement factor (EF) with a lithography depth of 40 similar to 60 nm. The pattern fabricated by LIL will change and the EF will decrease when the theoretical lithography depth exceeds the photoresist thickness due to different exposure times. To obtain a high EF for 2DSGA, it is necessary to control the thickness of the photoresist and exposure time, which contributes to the actual preparation of SERS substrate.
NSTL
Elsevier
