首页|Self-powered near-infrared MoS2/n-Si photodetectors with Al2O3 interface passivation

Self-powered near-infrared MoS2/n-Si photodetectors with Al2O3 interface passivation

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  • NSTL
  • Elsevier
Due to their excellent light absorption and photovoltaic effects, transition metal dichalcogenide-based heterojunctions have been widely investigated as materials for optoelectronic devices. This work presented a MoS2 film preparation process using electron beam evaporated MoO3 films as the precursor layer. The prepared MoS2 film was used in the self-powered MoS2/Al2O3/n-Si photodetector, which showed high responsivity (1.15 A W?1), normalized detectivity (1.28 × 1011 Hz1/2 cm/W) and photoresponse (τr = 28 μs) without external bias. Besides, the photodetector exhibited a large frequency-photoresponse range (up close to 100 kHz). Moreover, attributed to the excellent MoS2 quality and the effective interface passivation by ALD-deposited Al2O3, the high-speed photoresponse of the photodetector was realized. These results demonstrated the potential of applying MoS2 material prepared from electron beam evaporated MoO3 precursor layers in the high-frequency and fast photoresponse photodetectors.

ALD-deposited Al2O3MoO3 precursor layerMoS2/n-Si HeterojunctionPhotodetectorsSelf-powered

Xu Y.、Shen H.、Zhao Q.、Wang Z.、Ge J.、Zhang W.、Wu D.

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College of Materials Science and Technology Jiangsu Key Laboratory of Materials and Technology for Energy Conversion Nanjing University of Aeronautics and Astronautics

School of Physics and Microelectronics and Key Laboratory of Material Physics Ministry of Education Zhengzhou University

2022

10.1016/j.jallcom.2022.163878

Journal of Alloys and Compounds

Journal of Alloys and Compounds

EISCI
ISSN：0925-8388
年,卷(期)：2022.902
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