首页|Simulation model for electron irradiated IGZO thin film transistors
Simulation model for electron irradiated IGZO thin film transistors
扫码查看
点击上方二维码区域，可以放大扫码查看
原文链接
NSTL
Iop Publishing Ltd
An efficient drain current simulation model for the electron irradiation effect on the electrical parameters of amorphous In-Ga-Zn-O (IGZO) thin-film transistors is developed. The model is developed based on the specifications such as gate capacitance, channel length, channel width, flat band voltage etc. Electrical parameters of un-irradiated IGZO samples were simulated and compared with the experimental parameters and 1 kGy electron irradiated parameters. The effect of electron irradiation on the IGZO sample was analysed by developing a mathematical model.
simulation modelIGZOTFTelectron irradiation
G K Dayananda、C Shantharama Rai、A Jayarama、Hyun Jae Kim
展开 >
Department of E&C Engineering, Canara Engineering College, Mangalore 574219, India
Department of E&C Engineering, AJIET, Mangalore 575009, India
Department of Physics, SCEM, Adyar, Mangalore 575007, India
Yonsei University, Seoul 120-749, Republic of Korea
NSTL
Iop Publishing Ltd
