首页|Improved performance of deep ultraviolet AlGaN-based light-emitting diode by reducing contact resistance of Al-based reflector
Improved performance of deep ultraviolet AlGaN-based light-emitting diode by reducing contact resistance of Al-based reflector
扫码查看
点击上方二维码区域，可以放大扫码查看
原文链接
NSTL
Elsevier
? 2022 Elsevier B.V.In this study, chlorine (Cl) treatment was carried out on p-AlGaN to enhance the performance of ultraviolet-C light emitting diodes (UVC LEDs) by modifying ITO work function and hence reducing the contact resistance of ITO/Al reflector. The Cl-treated UVC LEDs exhibit the forward voltage of 6.88 V at 20 mA, whereas the reference samples show 7.50 V. The light output power and relative wall plug efficiency (WPE) of the Cl-treated UVC LEDs are enhanced by 17.1% at 500 mW and 19.5% at 100 mA, respectively, as compared to the reference. Additionally, the Cl-treated LEDs also display reduction in both the leakage current and ideality factor. Further, the photoluminescence (PL) intensity of AlGaN micro-disks is also enhanced by the Cl-treatment. X-ray photoemission spectroscopy (XPS) results indicate the formation of Cl-ITO at the ITO/p-AlGaN interface and the passivation of the surface states of AlGaN by Cl radicals. Based on the XPS results, a possible mechanism for the improved performance of Cl-treated UVC AlGaN-based LEDs is described and discussed.
Chlorine treatmentITOSurface passivationUVC LEDsWork function
Sim K.-B.、Jin J.-Y.、Kim S.-K.、Seong T.-Y.、Hwang G.W.、Ko Y.-J.、Amano H.
展开 >
Department of Material Science and Engineering Korea University
Center for Neuromorphic Engineering Korea Institute of Science and Technology
Clean Energy Research Center Korea Institute of Science and Technology
Center for Integrated Research of Future Electronics and Institute of Materials and Systems for Sustainability Nagoya University
NSTL
Elsevier
