首页|Investigation of Ce doped BaTiO(3 )compound for optoelectronic devices
Investigation of Ce doped BaTiO(3 )compound for optoelectronic devices
扫码查看
点击上方二维码区域，可以放大扫码查看
原文链接
NSTL
Elsevier
The full potential linearized augmented plane wave (FP-LAPW) method based on the density functional theory (DFT) is employed to probe the optical and electronic features of Ba1-xCexTiO3 (x = 0%, 5.55%, 12.5%, 25% and 50%) perovskite oxides. The effect of Ce doping on the band structure (BS) and optical spectra of cubic BaTiO3 compound has been explored. The outcomes of this work unveil the indirect-band semiconducting nature of Ba1-xCexTiO3(x = 0%), which becomes direct after Ce doping. Moreover, the width of band gap (E-g) narrows with the upsurge of Ce concentration in BaTiO3. The optical behavior of Ba1-xCexTiO3 compounds is estimated through refractive index, reflectivity, dielectric constant, optical conductivity and absorption coefficient. The controlled reduction in E-g of BaTiO3 with rise in concentration of Ce is a useful tool to make this compound promising for optical and optoelectronic devices.
NSTL
Elsevier
