We study the electronic properties of heterostructures based on monolayer black phosphorus (BP) and two types of borophene (HBoro and Boro delta). The contact between BP and borophene results in the disappearance of Schottky barriers, indicates the metallization of BP. The BP/HBoro forms an n-type Schottky contact and BP/ Boro & UDelta; forms a p-type Schottky contact between the channels and electrodes. The edge modification of BP also affects the Schottky contact type and Schottky barrier heights. Moreover, it is found that the gate voltage can not only effectively modulate the Schottky barrier height but also change the Schottky contact type of BP/borophene structures. The ohmic contact can be achieved at some certain gate voltage. The results provide a promising route to design and fabricate tunable devices based on edge modified BP with borophene electrodes.
Key words
Black phosphorus/Heterostructure/Borophene/Edge modification/Schottky barrier/GENERALIZED GRADIENT APPROXIMATION/RESISTANCE/TRANSPORT/CAPACITY/GAP/ION
NSTL
Elsevier