首页|A combinatorial study on ZnO-In2O3-SnO2 system: The effects of different postgrowth annealing conditions on optical and electrical properties
A combinatorial study on ZnO-In2O3-SnO2 system: The effects of different postgrowth annealing conditions on optical and electrical properties
扫码查看
点击上方二维码区域，可以放大扫码查看
原文链接
NSTL
Elsevier
? 2022 Elsevier B.V.ZnO-In2O3-SnO2 (ZITO) thin film library was produced via the combinatorial approach. The films were deposited using a magnetron sputtering system. Varying ZITO compositions were obtained in a single deposition run by employing a custom-made triangular type of substrate carrier magazine. The effect of various postgrowth annealing atmospheres on the electrical and optical properties of the films were examined. Air, Ar, forming gas (Ar+4 vol% H2), and successive annealing under forming gas + argon atmospheres were studied. Room temperature (RT) deposited films were identified either crystalline or amorphous depending on the location of the substrate on the holder. All these samples exhibited average visible transmittance (Tvis) below 75 % and sheet resistance (RS) higher than 50 Ω/□. Annealing under air atmosphere improved the optical and electrical properties of the films significantly, but not simultaneously for the same composition. Although better optical improvement was achieved by annealing under Ar and increase in electrical conductivity after annealing under forming gas, optimum properties have been obtained with the latter condition. Tvis values above 85 % and RS values below 50 Ω/□ were attained. On the other hand, successive annealing did not provide any advantage in reaching optimal samples when compared to single gas atmosphere annealings. Further, increasing the annealing temperature were found to be beneficial particularly for the conductivity of many compositions. Finally, this study has introduced a systematic approach to produce transparent conductive oxide thin films with reduced indium content that can be suitable for many optoelectronic applications.
NSTL
Elsevier
