首页|Optical bistable SOI micro-ring resonators for memory applications
Optical bistable SOI micro-ring resonators for memory applications
扫码查看
点击上方二维码区域，可以放大扫码查看
原文链接
NSTL
Elsevier
The present work focuses on experimental investigations of a bistable silicon-on-insulator (SOI) microring resonator (MRR). The resonator exploits a continuous-wave operation of the carrier-induced bistability demonstrating a stable hysteresis response at the through and drop ports when the input power exceeds the threshold value. Flipping the optical input power provides a convenient mechanism for a switching of the MRR output characteristics between two steady states having a long holding time. The transition of the resonator output between these states is experimentally investigated. It is shown that the switching speed is limited by a low-to-high transition of 188 ns. Obtained results shows an application of the passive SOI MRR as an all-optical memory cell with two complementary outputs.
NSTL
Elsevier
