首页|(162889)9Improvement of thermoelectric properties of flexible Bi_2Te_3 thin films in bent states during sputtering deposition and post-thermal annealing
(162889)9Improvement of thermoelectric properties of flexible Bi_2Te_3 thin films in bent states during sputtering deposition and post-thermal annealing
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NSTL
Elsevier
High-quality thermoelectric thin films formed on flexible substrates are important for the development of flexible thermoelectric generators as power supplies for wireless sensors and wearable devices. However, the thermoelectric properties of the films formed on flexible substrates are inferior to those of films formed on rigid substrates because flexible substates shrink during the processes of film deposition and post-thermal annealing. To overcome this problem, we propose a modification during these processes. Bismuth telluride thin films were deposited on polyimide substrates using radio-frequency magnetron sputtering. The substrates were bent to a convex or concave shape, followed by thermal annealing under the same bending conditions. The crystallite size and crystal orientation improved when the films were set to a concave shape during the film deposition and post-thermal annealing processes. This phenomenon occurred presumably because the substrate shrinkage was counteracted by the stretching of the substrate, and the strains did not accumulate much in the films, resulting in improved crystal growth. Consequently, the electrical conductivity was increased, and the resulting power factor of 16.1 μW/(cm K_2) is 1.4 times higher than that of the Bi_2Te_3 film formed on a flat substrate.
Bi_2Te_3Bent states Flexible thermoelectric generatorsThermoelectric propertiesPost-thermal annealingSputtering deposition
Oga Norimasa、Tomoyuki Chiba、Masataka Hase
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Department of Materials Science, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan
NSTL
Elsevier
