Abstract
? 2022 Elsevier B.V.Metal nanoparticles layer (Ag and Cu) derived NiFe2O4 thin ?lms have been synthesized on Pt/Ti/SiO2/Si substrates via a facile chemical solution deposition approach. The influence of metal nanoparticles layer on resistive switching performance of NiFe2O4-based devices has been investigated. The multilayer devices exhibit low power, low Set/Reset voltage, low resistance fluctuation, high ON/OFF ratio, and superior retention performance compared to the majority of reported NiFe2O4-based resistance random access memory devices. Such improvement is ascribed to metal nanoparticles layer providing controllable paths to the growth/fracture of conductive filaments and suppressing the randomness of filaments based on Current transport conduction mechanisms and temperature dependence of resistance analysis. The hybrid metal conducting filaments and oxygen vacancies conducting filaments model has been proposed to clarify the behavior.
NSTL
Elsevier