Formation of silicide layers on a Ti-46Al-8Ta alloy in pack cementation and diffusion couple experiments
Rubacha, K. 1Godlewska, E. 1Zawadzka, K. 1Dabrowa, J.1
扫码查看
点击上方二维码区域，可以放大扫码查看
作者信息
1. AGH Univ Sci & Technol
折叠
Abstract
This work compares silicide layers grown on Ti-46Al-8Ta (at.%) substrates in pack cementation and in diffusion couple experiments at elevated temperatures. Based on preliminary experiments showing Kirkendall porosity at the coating/substrate interface, a micrometric Ti-10%Si interlayer was deposited by magnetron sputtering prior to siliconizing treatments to prevent excessive Ti diffusion from the substrate. In both types of experiments, the diffusion zone was multi-layered and consisted of Ti/Ta silicides in the outer part and Ti/Ta aluminides in the inner part next to the interface with the alloy. Significant differences were found in the overall thickness and thicknesses of the individual layers. Kinetics of layer growth was followed by thickness measurements. Although inward diffusion of silicon was the dominant mechanism of coating formation, other concurrent processes evidently contributed to the development of the characteristic microstructural features and to the observed differences in thickness.
NSTL
Elsevier