首页|Numerical investigation of quantum tunneling time and spin-current density in GaAs/GaMnAs/GaAs barriers: Role of an applied bias voltage
Numerical investigation of quantum tunneling time and spin-current density in GaAs/GaMnAs/GaAs barriers: Role of an applied bias voltage
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NSTL
Elsevier
In this paper, we have discussed theoretically the effect of an applied bias voltage and the temperature on the spin-tunneling time, spin-dependent polarization and current densities of holes in GaAs/GaMnAs double barriers using the transfer matrix method (TMM). The behavior of the transmission coefficients for different spin ori-entations (up and down), various applied voltages and different temperatures were calculated. Our findings indicate that the maxima of the spin-up transmission coefficient shift towards the lower energies by increasing the applied bias voltage. Furthermore, our structure is almost transparent for spin-down holes and presents some resonances for spin-up ones. In addition, we have found that the tunneling time decreases progressively by enhancing the applied voltage. It is also shown that the current densities of holes with both spin-up and down orientations present a negative differential resistance (NDR). This (NDR) resistance is more intense for spin-up holes than spin-down ones. Consequently, the obtained results pointed out that we can design and fabricate a high-speed spin-filters and diodes by fixing the appropriate values of applied voltages and temperatures.
Spin-dependent transmissionTransfer matrix method1DSchrodinger equationDiluted magnetic semiconductor GaMnAsMAGNETORESISTANCEINJECTION
NSTL
Elsevier
