Journal of Alloys and Compounds2022,Vol.8988.DOI:10.1016/j.jallcom.2021.162884

(162884)Topological control of negatively charged local environments for tuning bismuth NIR luminescence in glass materials

Linling Tan Ang Qiao Changgui Lin
Journal of Alloys and Compounds2022,Vol.8988.DOI:10.1016/j.jallcom.2021.162884

(162884)Topological control of negatively charged local environments for tuning bismuth NIR luminescence in glass materials

Linling Tan 1Ang Qiao 2Changgui Lin1
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作者信息

  • 1. Laboratory of IR Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 3152U, PR China
  • 2. Department of Chemistry and Bioscience, Aalborg University, 9220 Aalborg, Denmark
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Abstract

Bismuth (Bi)-doped glasses have the potential to be applied in tunable photonic devices owing to their broadband near-infrared (NIR) luminescence. However, it is still challenging to develop Bi-doped glasses with luminescence performance at desirable emission wavelength since it is hard to stabilize the specific luminescent Bi centers. In this work, a structural model describing the negatively charged local environments is proposed to stabilize the activated Bi centers by adding Ta_2O_5 and/or Al_2O_3 in Bi-doped silicate glasses. The results show that the structural model leads to great enhancement of the NIR emission, the broadening of the emission bandwidth and the blueshift of the emission peak, compared to the samples without Ta_2O_5/Al_2O_3 doping. The change in NIR emission performances could originate from the generation of active Bi~+ centers. The latter arises from oxidation of Bi° induced by the negatively charged local environments around Bi. Moreover, the intensity of the Bi NIR emission is enhanced, and this is attributed both to the suppression of phase separation by adding Ta_2O_5 and to the dispersing effect of alumina.

Key words

Broadband luminescence/Bismuth/Negatively charged local environments/Silicate glass

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出版年

2022
Journal of Alloys and Compounds

Journal of Alloys and Compounds

EISCI
ISSN:0925-8388
被引量2
参考文献量52
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