Journal of Alloys and Compounds2022,Vol.92513.DOI:10.1016/j.jallcom.2022.166607

Preparation and incorporation of NiSe@MoSe2 nano arrays in PVA matrix for resistive switching memory

Kaur R. Singh K.P. Tripathi S.K.
Journal of Alloys and Compounds2022,Vol.92513.DOI:10.1016/j.jallcom.2022.166607

Preparation and incorporation of NiSe@MoSe2 nano arrays in PVA matrix for resistive switching memory

Kaur R. 1Singh K.P. 1Tripathi S.K.1
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作者信息

  • 1. Centre of Advanced Study in Physics Department of Physics Panjab University
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Abstract

? 2022In the present work, we have synthesized Nickel selenide@Molybdenum diselenide (NiSe@MoSe2) heteronanostructured arrays by a one-step hydrothermal method. The structural and optical analysis of nanopowder is done through Field emission scanning electron microscopy (FESEM), elemental mapping, Energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV–vis, and Photoluminescence (PL) spectroscopy. XRD reveals the formation of a hexagonal structured system with a crystallite size of 166 nm. The bandgap of NiSe@MoSe2 nanosheets is found to be 1.71 eV, calculated from UV–vis spectra. FESEM showed the homogenous growth of NiSe@MoSe2 nanosheets while electronic transitions are investigated through PL. Further, the polymer nanocomposites of NiSe@MoSe2/PVA are synthesized by the ex-situ method at six different NiSe@MoSe2 concentrations in the PVA matrix. XRD shows good interaction between NiSe@MoSe2 and PVA polymer. The crystallinity increases as concentrations of NiSe@MoSe2 in PVA increases. FESEM shows the uniform distribution of NiSe@MoSe2 nanosheets in the PVA matrix. The two-terminal Ag/NiSe@MoSe2-PVA/FTO devices have been fabricated and characterized electrically by I-V measurements. I-V shows hysteresis behavior and also, bipolar switching is observed with a maximum Ion/Ioff ratio of ~103 at 2 wt. % NiSe@MoSe2 concentration in the PVA matrix. The good stability and reliability are checked through endurance and write-read-erase-read cyclic sequences. The obtained results open up the possibility of a next-generation non-volatile resistive switching memory device.

Key words

ION/IOFF ratio/Memory devices/Nanoarrays/Polymer nanocomposites

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出版年

2022
Journal of Alloys and Compounds

Journal of Alloys and Compounds

EISCI
ISSN:0925-8388
被引量2
参考文献量75
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