首页|Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor
Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor
扫码查看
点击上方二维码区域，可以放大扫码查看
原文链接
NSTL
Elsevier
The effects of temperature on the switching kinetics of an yttrium-stabilized zirconia-based memristor from a low-resistance state to a high-resistance state have been experimentally investigated. It was found that the memristor relaxation time depends on the temperature in a non-monotonous way, with a maximum observed at the temperature close to 55 degrees C. This nonmonotonic behavior is a signature of the noise-enhanced stability phenomenon observed in all physical and complex systems characterized by metastable states. (c) 2022 Elsevier Ltd. All rights reserved.
Resistive switchingMemristorYttria stabilized zirconiaMetastabilityNoise induced stabilizationBeneficiary role of noiseTHERMAL AGITATION
Gorshkov, O. N.、Agudov, N. V.、Carollo, A.、Valenti, D.、Filatov, D. O.、Koryazhkina, M. N.、Novikov, A. S.、Shishmakova, V. A.、Spagnolo, B.、Shenina, M. E.、Antonov, I. N.
NSTL
Elsevier
