首页|Multi-wavelength photodetectors based on porous spin-coated and compact RF-sputtered NiO films grown over Si substrate: Effect of surface morphology
Multi-wavelength photodetectors based on porous spin-coated and compact RF-sputtered NiO films grown over Si substrate: Effect of surface morphology
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NSTL
Elsevier
Spin-coated and RF-sputtered NiO films were grown over Si substrate. FESEM analysis showed porous morphology for spin-coated NiO film and compact surface morphology for RF-sputtered NiO film. The photodetection properties were explored in metal-semiconductor-metal (MSM) configuration and were found to be greatly affected by the surface morphology of NiO. The responsivity of spin-coated NiO/Si PD was measured as 6.90, 3.68 and 4.39 A/W, whereas it was measured as 1.73, 1.81 and 2.07 A/W for RF-sputtered NiO/Si photodetector (PD), under exposure to 365, 625 and 850 nm lights, respectively. The photo-to-dark current ratio (PDCR) was calculated as 303, 172, 206 and 31, 35, 41 for spin-coated and RF-sputtered NiO/Si PDs, respectively. The higher photoresponse of spin-coated NiO/Si PD over RF-sputtered NiO/Si PD, especially at 365 nm wavelength, resulted from the larger surface area of porous structured spin coated NiO film. Both PDs exhibited stable and repeatable photoresponse at different switching frequencies of the illumination source. The rise/fall time were estimated as 1.96/9.76 and 3.49/ 7.68 ms for spin-coated and RF-sputtered NiO/Si PDs, respectively.
NSTL
Elsevier
