Abstract
Recently, bismuth-based hybrid organic-inorganic halide perovskite-like materials have attracted great attention due to their friendly and safely processing, chemical stability, and photoconductive properties. Here, we report a simple method to prepare a new lead-free hybrid material of hydrazine iodobismuthate (HyBI) with semiconductor properties, adopting zero-dimensional (0D) perovskite-like structure, and its crystal, thermal, bandgap, and optoelectronic properties were explored. It is noteworthy that HyBI has a direct bandgap of 1.99 eV, carries mobility as high as 64.2 cm2V-1s-1, charge-trap density of 2.32 x 1010 cm-3. Moreover, self-powered photodetector devices were fabricated using HyBI, which showed the re-sponsivity under 470 nm was 7.63 mA/W. This work highlights the material as a promising candidate for lead-free optoelectronic applications. (c) 2021 Published by Elsevier B.V.
NSTL
Elsevier