首页|Effect of hybridization in PdAlY-(Ni/Au/Ir) metallic glasses thin films on electrical resistivity
Effect of hybridization in PdAlY-(Ni/Au/Ir) metallic glasses thin films on electrical resistivity
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NSTL
Elsevier
Thin film metallic glasses (MGs) are promising materials for electronic applications. While the transport prop-erties of MGs are composition dependent, the influence of hybridization on the resistivity has not been inves-tigated systematically. We implement a correlative experimental and computational approach utilizing thin film deposition, electrical resistivity measurements, synchrotron X-ray diffraction and ab initio calculations to explore the relationship between the fraction of hybridized bonds present in PdAlY-M glasses with M=Ir,Au,Ni, where the electrical behavior is dominated by d-electrons. The strong bonds hybridization in PdAlY-Ir yields a high resistivity of 175 mu omega m, while the weakly hybridized bonds in PdAlY-M MGs (M = Au, Ni) result in lower re-sistivities of 114 and 92 mu omega m, respectively. We propose that an increase in the amount of anti-bonding states close to the Fermi level yields an increased room temperature resistivity.