首页|Rare earth Nd-doping lead-free double perovskite Cs2AgBiBr6 films with improved resistive memory performance
Rare earth Nd-doping lead-free double perovskite Cs2AgBiBr6 films with improved resistive memory performance
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NSTL
Elsevier
? 2022 Elsevier B.V.Lead-free double perovskites have been an excellent candidate for resistive memories due to their mixed electronic-ionic properties, remarkable ambient stability and nontoxicity. However, the studies on resistive memories of rare-earth ion doping lead-free double perovskite are scarce to date. Here, we report the lead-free double perovskite Cs2AgBiBr6 films with tuning rare earth Nd3+ content by the vacuum sublimation and solution processing. The X-ray diffraction (XRD) pattern and scanning electron microscopy (SEM) confirm that Nd-doped Cs2AgBiBr6 films show high crystallinity and phase purity. We also systematically investigate the resistive memory properties of the resulted Cs2AgBiBr6 films doped by different content Nd3+. The resistive memory devices demonstrate a typical write-once-read-many-times (WORM) behavior with low on-set voltage and long retention time. Particularly, the ON/OFF ratio of Nd-doped Cs2AgBiBr6 film is 1000 times higher than that of the undoped Cs2AgBiBr6 film. This study exhibits that Nd-doped Cs2AgBiBr6 film provide a new material platform for lead-free perovskite-based application in future electronics and optoelectronics.
Cross-bar electrodesFilmsLead-free double perovskitesRare earth ion dopingResistive memories
Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM) Nanjing Tech University (Nanjing Tech)
The State Key Laboratory of Materials-Oriented Chemical Engineering College of Materials Science and Engineering Jiangsu Collaborative Innovation Center for Advanced Inorganic Function Composites Jiangsu National Synergetic Innovation Center for Advanced
Electron Microscope Laboratory Nanjing Forestry University
NSTL
Elsevier
