首页|Electrical resistivity studies of chromium and nickel carbide infiltrated reaction sintered silicon carbide

Electrical resistivity studies of chromium and nickel carbide infiltrated reaction sintered silicon carbide

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Reaction sintered silicon carbide with 5% nickelcat-bide 5% chromium carbide, 2.5% nickel carbide and 2.5%chromium carbide together were prepared. Electrical resistivity ofthese materials was determined from room temperature (RT) to1000℃. The resistivity decreases with increase in temperature.The variation in electrical resistivity from RT to 1000℃ was 0.75 to 0.030 ohm.cm for RSSC infiltrated with chromium carbidewhereas 0.208 to 0.193 ohm.cm with that of 2.5% chromiumcarbide and 2.5% nickel carbide together.

Silicon carbideElectrical resistivity铬镍碳化物烧结碳化硅电阻率

N.K.Reddy、V.N.Mulay

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1999

Metals materials and processes

Metals materials and processes

ISSN:0970-423X
年,卷(期):1999.11(1)