首页|NOVEL PZT CAPACITOR TECHNOLOGY FOR 1.6 V FRAM EMBEDDED SMARTCARD
NOVEL PZT CAPACITOR TECHNOLOGY FOR 1.6 V FRAM EMBEDDED SMARTCARD
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NSTL
In this study we present an MOCVD-PZT-based 1.6 V operational 1T1C COB FRAM for embedded smart card applications. The extension of FRAM operation to low voltage requires reduction of PZT thickness to 100 nm which is accompanied by a degradation of saturation polarization as well as reliability properties. It will be shown that the application of a seeding layer offers a solution to the reliability problem. The sensing margin of the device is enhanced by a careful optimization of the Ti/(Zr+Ti) ratio of the PZT film.
Technology Development Team 2, Memory Division, Semiconductor Business, Samsung Electronics Co. Ltd., San #24, Nongseo-Ri, Giheung-Eup, Yongin-City, Gyeonggi-Do, Korea
NSTL
