首页|Hydrostatic pressure effect on melting temperature and lattice thermal conductivity of bulk and nanowires of indium arsenide
Hydrostatic pressure effect on melting temperature and lattice thermal conductivity of bulk and nanowires of indium arsenide
扫码查看
点击上方二维码区域,可以放大扫码查看
原文链接
NSTL
Elsevier
The Morelli-Callaway model was used to calculate the lattice thermal conductivity (LTC) of indium arsenide in both zinc blende and wurtzite phases of bulk and nanowire (NW) forms under applied hydrostatic pressures. Calculations were performed for NWs with diameters of 50, 63, 66, 100, and 148 nm in the temperature range of (0-400) K. The melting temperature and hydrostatic pressure phase diagram of the bulk and NW forms were predicted using the Clapeyron equation. A new method was developed to examine various related parameters, such as bulk modulus and mass density. The influence of pressure on melting temperature, melting enthalpy, melting entropy, surface energy, and stress. Results indicate that the calculated values of group velocity increased with the increase in NW size. The melting temperature dropped sharply with the rise in pressure. The pressure and temperature dependencies of the LTC were obtained, and they decreased with applied hydrostatic pressure.