首页|Hydrostatic pressure effect on melting temperature and lattice thermal conductivity of bulk and nanowires of indium arsenide

Hydrostatic pressure effect on melting temperature and lattice thermal conductivity of bulk and nanowires of indium arsenide

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The Morelli-Callaway model was used to calculate the lattice thermal conductivity (LTC) of indium arsenide in both zinc blende and wurtzite phases of bulk and nanowire (NW) forms under applied hydrostatic pressures. Calculations were performed for NWs with diameters of 50, 63, 66, 100, and 148 nm in the temperature range of (0-400) K. The melting temperature and hydrostatic pressure phase diagram of the bulk and NW forms were predicted using the Clapeyron equation. A new method was developed to examine various related parameters, such as bulk modulus and mass density. The influence of pressure on melting temperature, melting enthalpy, melting entropy, surface energy, and stress. Results indicate that the calculated values of group velocity increased with the increase in NW size. The melting temperature dropped sharply with the rise in pressure. The pressure and temperature dependencies of the LTC were obtained, and they decreased with applied hydrostatic pressure.

Indium arsenide nanowiresLattice thermal conductivityMelting temperatureMorelli-Callaway modelClapeyron equationHydrostatic pressureSEMICONDUCTORSILICONSIZEPARAMETERSEXPANSIONCONFINEMENTELEMENTSHEAT

Karim, Hawbash H.、Omar, M. S.、Qader, Ibrahim Nazem

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Koya Univ

Univ Salahaddin Erbil

Univ Raparin

2022

Physica

Physica

ISSN:0921-4526
年,卷(期):2022.640
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