首页|Effect of defective structure taking on the electronic and optical properties of InP nanowire
Effect of defective structure taking on the electronic and optical properties of InP nanowire
扫码查看
点击上方二维码区域，可以放大扫码查看
原文链接
NSTL
Elsevier
The effect of defective structure taking on the electronic and optical properties of InP nanowire has been investigated. The substitutional and the interstitial doping (X-In, X-P, X-in, X = Zn, Ga, Ge, As, Se) are considered as the defective structures. The results suggested that Zn-In and Ga-In doping induce acceptor levels. Ge-In, As-In and Se-In doping induce donor levels. The Ga-in, Ge-in, As-in and Sein doping induce both donor and acceptor levels, which formed a bridge effect of impurity bands and an orbital hybridization. The absorptive spectra implied that their optical absorption appears an enhanced trend after X-In and X-P doping in the subsurface layer meanwhile the absorption of X-In and XP doping in the core layer are lower than that of original InP nanowire. Therefore, the absorptive property can be improved by X-In and XP doping in the subsurface layer or by Xin interstitial doping.
NSTL
Elsevier
