首页|The effect of recrystallization on the resistivity recovery of W

The effect of recrystallization on the resistivity recovery of W

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  • NSTL
  • Elsevier
The influence of recrystallization on the recovery of radiation damage in tungsten (W) was investigated. Polycrystalline cold-rolled W foils were annealed in the temperature range between 1100 and 1600 °C and recrystallization and grain growth was observed. Subsequently, the specimens were irradiated with 7 MeV protons at cryogenic temperature. The induced radiation damage and its recovery during isochronal annealing treatments was monitored by in-situ measurements of the electrical resistivity. We observe that the recrystallized samples exhibit (a) a significant reduction in total defect recovery and (b) changes in characteristic features of the recovery spectra with respect to the as-received ones. These results are discussed and correlated to the effect of grain boundaries and dislocations on the radiation defect reactions.

Electrical resistivityProton irradiationRecrystallizationResistivity recoveryTungsten

Kotsina Z.、Axiotis M.、Theodorou A.、Mitsi E.、Apostolopoulos G.

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Tandem Accelerator Laboratory Institute of Nuclear and Particle Physics National Centre for Scientific Research “Demokritos”

Section of Condensed Matter Physics Department of Physics National and Kapodistrian University of Athens Panepistimioupolis

Institute of Nuclear & Radiological Science & Technology Energy & Safety National Centre for Scientific Research “Demokritos”

2022

10.1016/j.jnucmat.2021.153368

Journal of Nuclear Materials

Journal of Nuclear Materials

EISCI
ISSN：0022-3115
年,卷(期)：2022.558
  • 49