首页|Polarity controlled epitaxial growth of 111-layers in CVD-ZnS proven by EBSD
Polarity controlled epitaxial growth of 111-layers in CVD-ZnS proven by EBSD
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NSTL
Elsevier
? 2022 Elsevier Inc.Polycrystalline, chemical vapor deposited (CVD) ZnS deposited on a hot isostatically pressed ZnS substrate is studied using scanning electron microscopy (SEM) including electron backscatter diffraction (EBSD) to gain new insights into the growth mechanism during production. The orientations of polar Zn-S-double layers in the zincblende structure of cubic ZnS are analyzed using a recently developed method to determine the polar 〈111〉 axes by EBSD. Here the Hough transform is utilized to find a preferred polar axis in twinned lamellae of industrial CVD-ZnS. The results verify an epitaxial stacking of {111}-layers at the growth front. They furthermore show that the Zn-layer of the analyzed {111}- double layers always points away from the substrate, independent of the polarity of the substrate crystals. If a substrate grain contains a S-layer positioned towards the surface, the polarity in the adjacent CVD grain is inverted, meaning the epitaxial relationship is not perfect.
Chemical vapor depositionCoordination polyhedra ruleCrystal growthelectron backscatter diffractionEpitaxyPolar axisZincblende
NSTL
Elsevier
