Computational Materials Science2022,Vol.2037.DOI:10.1016/j.commatsci.2021.111138

p Field-induced semiconductor-metal transition of hybrid ZnO and graphene nanocomposites

Li, Hongfei Qu, Zhaoming Xie, Zun Chen, Yazhou
Computational Materials Science2022,Vol.2037.DOI:10.1016/j.commatsci.2021.111138

p Field-induced semiconductor-metal transition of hybrid ZnO and graphene nanocomposites

Li, Hongfei 1Qu, Zhaoming 1Xie, Zun 2Chen, Yazhou1
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作者信息

  • 1. Army Engn Univ
  • 2. Hebei Normal Univ
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Abstract

In this study, structural and electronic properties of two-dimensional hybrid ZnO/graphene (ZnO/G) and ZnO/ graphene/graphene (ZnO/G/G) nanocomposites are investigated based on first-principles calculations. The calculation indicates that interlayers of the two nanocomposites exist typical van der Waals (vdW) weak interactions. The intrinsic electronic properties of ZnO and graphene monolayer are well-conserved, and the deposition on ZnO substrate opens a band gap of graphene at the Dirac point. When electric fields are applied, the ZnO/G nanocomposites exhibits semiconducting to metallic transition. The transition between Schottky and Ohmic contacts can be effectively implemented, accompanied by the conversion of p-type and n-type Schottky. Meanwhile, the projected density of states and work function of ZnO/G are deeply investigated to discuss the effects of orbital and charge transfer. Compared to ZnO/G, ZnO/G/G would overcome the lower Schottky barrier height (SBH) to form Ohmic contacts, indicating a higher sensitivity to electric field modulation. The formation of low-resistance Ohmic contact has important application for high-performance semiconductor devices.

Key words

Graphene/Nanocomposites/Electronic band structures/Schottky and Ohmic contacts/Electric field/TOTAL-ENERGY CALCULATIONS/I-V BEHAVIOR/ELECTRONIC-STRUCTURES/DIRAC FERMIONS/MONOLAYER

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出版年

2022
Computational Materials Science

Computational Materials Science

EISCI
ISSN:0927-0256
参考文献量34
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