首页|Understanding the role of potassium incorporation in realizing transparent p-type ZnO thin films
Understanding the role of potassium incorporation in realizing transparent p-type ZnO thin films
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NSTL
Elsevier
? 2022 Elsevier B.V.Developing p-n homojunction zinc oxide (ZnO) is an effective approach for delivering high-performance ZnO-based optoelectronic devices; however, difficulties associated with preparing p-type ZnO severely hinder the development of such devices. Herein, we report the fabrication of potassium-incorporated transparent zinc oxide (K-ZnO) thin films by subjecting ZnO thin films to high-pressure molten-salt treatment (hp-MST) in potassium nitrate (KNO3), which successfully led to p-type semiconductor films. With raising the hp-MST temperature, X-ray diffraction (XRD) results show that the ZnO (002) plane clearly becomes more crystalline, accompanying by larger grains. While the hp-MST temperature significantly influences surface morphology, as further revealed by scanning electron microscopy (SEM). More importantly, the carrier type of K-ZnO thin films was successfully transferred from n-type to p-type with raising the hp-MST temperature, while maintaining excellent optical performance. The oxygen species on the surface of the ZnO thin films change with raising the hp-MST temperature; in particular, the oxygen vacancies increase in number, as evidenced by X-ray photoelectron spectroscopy (XPS), which indicates that K is successfully incorporated into the surface of the ZnO thin films. Notably, the change in K 2p energy combined with the realization of p-type character by the raised hp-MST temperature suggests that K incorporation changes from interstitial to substitutional. This study introduces a simple and efficient alternative strategy for homojunction semiconductors that can be used to prepare next-generation highly efficient semiconductor devices.
Molten saltP-typePotassium-incorporatedTransparentZnO thin films
Guan S.、Zhan T.、Kurosu S.、Ukai T.、Hao L.、Zhao X.、Itoi T.、Lu Y.
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Bio-Nano Electronics Research Centre Toyo University
College of Mechanical Engineering Tianjin University of Science and Technology
Department of Physics Tokyo University of Science
Graduate School and Faculty of Engineering Chiba University
NSTL
Elsevier
