首页|High-Q photonic crystal cavities for nanolasers on patterned silicon-on-insulator substrates
High-Q photonic crystal cavities for nanolasers on patterned silicon-on-insulator substrates
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NSTL
Elsevier
As the performance of the silicon-based nanolaser is developing, further miniaturization of laser size is expected, and nanocavities will make it possible to avoid defects contained in the gain cavity. Hence, the miniaturization of the cavity is becoming necessary. In this letter, a photonic crystal cavity for the nanolaser grown on the patterned SOI substrate was proposed and analyzed in detail. The quality (Q) factor of 5 x 105 at a resonant wavelength of 1.516 mu m was demonstrated. And an insight into the variation of the resonant wavelength and the dependence of the Q-factor on the geometrical parameters of the laser cavity was obtained through simulation. For current injection, a pillar under the cavity region was introduced, the Q-factor over 104 was obtained as the length of the pillar was less than 160 nm. The effects of fabrication errors on the performance of cavities were also discussed by simulation.
Laser on siliconPhotonic crystalQuality factorAspect ratio trapping (ART)SI
NSTL
Elsevier
