首页|Transparency and room temperature ferromagnetism in diluted magnetic polycrystalline Zn1?xCrxTe non-oxide II-VI semiconductor compounds
Transparency and room temperature ferromagnetism in diluted magnetic polycrystalline Zn1?xCrxTe non-oxide II-VI semiconductor compounds
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NSTL
Elsevier
? 2022 Elsevier B.V.Polycrystalline Zn1?xCrxTe samples for x = 0.00, 0.05, 0.10, 0.15, 0.18, and 0.20 were synthesized by solid-state reaction, and their physical properties were studied for the purpose of identifying a novel non-oxide transparent diluted magnetic semiconductor (DMS). Their transport properties exhibit semiconducting behavior for low Cr concentrations and become conductors for higher Cr concentration concentrations. Ferromagnetic behavior was observed in Cr-doped ZnTe with Curie temperature Tc increasing as Cr concentration increases. At x = 0.20 Cr concentration, the system has Tc above room temperature, indicating an interesting II-VI ferromagnetic semiconductor. Furthermore, optical transparency in the visible light range was found to be 30–85 % for different Cr concentration concentrations. Also, according to the electrical transport measurement data in this study, the resistivity doesn't exhibit any significant change as the temperature increases for x = 0.20. This consistent resistivity exhibits a possible candidacy for further studies of the sample Zn0.80Cr0.20Te for half-metallic ferromagnetic properties.
Diluted magnetic semiconductor (DMS)Half metallic ferromagnetismNon-oxide transparent conductorRoom temperature ferromagnetismTransition Metal Dichalcogenide (TMD)ZnCrTe
Sarikhani A.、Medvedeva J.E.、Hor Y.S.、Avazpour L.、Liyanage W.、Satterfield D.、Nath M.、Florez R.、Bohannan E.
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Department of Physics Missouri University of Science and Technology
Department of Electrical and Computer Engineering University of Wisconsin-Madison
Department of Chemistry Missouri University of Science and Technology
Department of Nuclear Engineering Missouri University of Science and Technology
Materials Research Center Missouri University of Science and Technology