首页|Increased visible light absorption and charge separation in 2D–3D In2S3-ZnO heterojunctions for enhanced photoelectrochemical water splitting
Increased visible light absorption and charge separation in 2D–3D In2S3-ZnO heterojunctions for enhanced photoelectrochemical water splitting
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NSTL
Elsevier
? 2022A 2D–3D (ZnO/In2S3 heterojunction) photoanodes have been grown via a two-step physical vapor deposition (PVD) technique for ZnO, followed by chemical vapor deposition (CVD) for In2S3 2D nanolayers to study the photoelectrochemical (PEC) properties in the present study. 2D nanolayers of In2S3 deposited on ZnO thin film provide increased surface area and efficient electron-hole separation at the heterojunction interface which results in a significant reinforcement of photocurrent density and incident photon-to-current conversion efficiency (IPCE). The ZnO/In2S3 heterojunction shows a photocurrent density of 2.4 mAcm?2 at 1.23 V vs. RHE and IPCE value of 43% at 0.5 V with the stability of more than 100 min in comparison to both pristine ZnO and In2S3 samples. Measurements of photocurrent density at different wavelengths for the heterojunction sample confirm that the enhancement in photoelectrical response at the interface is due to higher absorption in the visible range as compared to pristine ZnO thin films and increased carrier separation at the interface in comparison to the pristine 2D In2S3 nanolayers. The experimental determination of the work function (KPFM), valence band offset (XPS), and bandgap values (absorption spectra) confirm favorable type II band alignment resulting in efficient charge transfer within the heterojunction sample. The present approach can be extended to other 2D heterojunction systems having unique optical and electronic properties.
And 2D–3D interfaceChemical vapor depositionIn2S3 nanolayersPEC water splittingZnO/In2S3 heterojunction
Kaur N.、Ghosh A.、Sharma D.、Mehta B.R.、Singh R.、Ahmad M.
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Thin Film Laboratory Department of Physics Indian Institute of Technology Delhi
Advanced Semiconductor Materials and Devices Laboratory Department of Physics Indian Institute of Technology Delhi
International Research Centre MagTop,Institute of Physics Polish Academy of Science
NSTL
Elsevier
