首页|Growth and comparison of high-quality MW PECVD grown B doped diamond layers on {118}, {115} and {113} single crystal diamond substrates

Growth and comparison of high-quality MW PECVD grown B doped diamond layers on {118}, {115} and {113} single crystal diamond substrates

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? 2022 Elsevier B.V.The use of {113} oriented single crystal diamond substrates has been reported for CVD growth of high-quality p-type layers with increased doping efficiency, compared to the {100} orientation, and excellent electrical properties. In this work we expand the range of crystal orientations to include the {118} and {115} planes and study the effect of B doping level in the gas phase with B/C ratios from 250 up to 2000 ppm. We demonstrate the growth of high-quality B doped SCD layers, with low RMS roughness (<2 nm) and high surface chemical purity (99% C with >1% B) for all orientations. Boron incorporation is shown to be dependent not only on the B/C in the gas phase, but also on the crystallographic orientation, with orientations with a higher density of {100}/{111} steps and risers exhibiting higher B incorporation into the solid from the gas phase (4 × 1019 cm?3 up to 1 × 1021 cm?3). Finally, using electro-chemical techniques, we confirm, for the first-time, high-quality electrodes on such orientations. Novelty statement: In this work we report, for the first time, MW PECVD of high-quality boron doped diamond layers on vicinal {118} and {115} single crystal substrates, which are confirmed, via electro- chemical characterisation, to be excellent electrodes.

Boron-doping levelCrystallographic orientationElectron transfer kineticsSingle crystal diamondSurface/chemical analysis

Taylor A.、Baluchova S.、Fekete L.、Klimsa L.、Kopecek J.、Simek D.、Vondracek M.、Mortet V.、Fischer J.、Schwarzova-Peckova K.、Mika L.

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FZU - Institute of Physics of the Czech Academy of Sciences

Charles University Faculty of Science Department of Analytical Chemistry UNESCO Laboratory of Environmental Electrochemistry

Charles University Faculty of Science Department of Teaching and Didactics of Chemistry

2022

Diamond and Related Materials

Diamond and Related Materials

EISCI
ISSN:0925-9635
年,卷(期):2022.123
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