Abstract
Currently, ail-inorganic halide perovskites are widely investigated for their applications in optoelectronics due to their excellent physical and chemical properties. In this paper, solution-processed bulk-hetero-junction lateral photodetectors Ag/CsPbBr_3:ZnO/Ag were built to enhance device performance, in which the active CsPbBr_3 layer were surface-passivated by ZnO nanoparticles (NPs) in an optimized molar ratio. By optimizing the molar ratio of CsPbBr_3 to ZnO NPs (i.e. fcR=M_(CsPbBr_3)/M_(ZnO)). the photocurrent from the lateral photodetector was greatly enhanced and, the dark current was suppressed to as low as 10~(12) A due to the lateral configuration by employing a 50 pm-width active layer made through an interdigital mask. As a result, the On/Off current ratio of the lateral photodetector Ag/CsPbBr_3:ZnO/Ag reaches to more than 10~3 for an optimum molar ratio k_R= 1:1, and it is 300-folds higher than that of the control device Ag/CsPbBr_3/Ag, showing a maximum specific detectivity D* of 1.6 × 10~(11) Jones with a photoresponsivity of 3.8 mA/W under 16 pW/cm~2 405 nm illumination at - 5 V. In this way, it provides an efficient method for solution-processed high-performance photodetectors by combining bulk heterojunction and lateral configuration.
NSTL
Elsevier