首页|Electrical and ferromagnetic properties of p-type ZnO thin films with and without the addition of graphene prepared by the sol-gel method
Electrical and ferromagnetic properties of p-type ZnO thin films with and without the addition of graphene prepared by the sol-gel method
扫码查看
点击上方二维码区域，可以放大扫码查看
原文链接
NSTL
Elsevier
This study determines the effect of the addition of graphene on the electrical and ferromagnetic properties of the ZnO thin films that are prepared by the sol-gel method. ZnO is a typically oxygen-deficient metal oxide and exhibits intrinsic n-type conductivity. ZnO thin films to which graphene is added and those to which it is not, which are annealed at 500 °C for 30 min in oxygen, exhibit p-type behavior. There is an increase in the hole concentration of the graphene-doped ZnO thin film because of competition between the densities of donor-like defects such as oxygen vacancies and acceptor-like defects such as oxygen interstitials (Oi) and the defect complex that is related to the substitution of carbon for zinc (CZn) and Oi. There is ferromagnetism in a ZnO thin film at room temperature because of the presence of Oi. The intensity of the ferromagnetic signal is increased because CZn and Oi are formed in a graphene-doped ZnO thin film.
NSTL
Elsevier
