Abstract
This study determines the effect of the addition of graphene on the electrical and ferromagnetic properties of the ZnO thin films that are prepared by the sol-gel method. ZnO is a typically oxygen-deficient metal oxide and exhibits intrinsic n-type conductivity. ZnO thin films to which graphene is added and those to which it is not, which are annealed at 500 °C for 30 min in oxygen, exhibit p-type behavior. There is an increase in the hole concentration of the graphene-doped ZnO thin film because of competition between the densities of donor-like defects such as oxygen vacancies and acceptor-like defects such as oxygen interstitials (Oi) and the defect complex that is related to the substitution of carbon for zinc (CZn) and Oi. There is ferromagnetism in a ZnO thin film at room temperature because of the presence of Oi. The intensity of the ferromagnetic signal is increased because CZn and Oi are formed in a graphene-doped ZnO thin film.
NSTL
Elsevier