首页|Electrical, linear and non-linear optical properties of MoSe2/PVA nanocomposites as charge trapping elements for memory device applications
Electrical, linear and non-linear optical properties of MoSe2/PVA nanocomposites as charge trapping elements for memory device applications
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NSTL
Elsevier
? 2022The work performed highlights the switching mechanism of MoSe2/PVA polymer nanocomposites (PNCs) at different concentrations of MoSe2 nanoparticles in the PVA matrix (1%, 3%, and 4%). The ex-situ approach had been used to synthesize MoSe2/PVA PNCs. XRD spectrum revealed the rise of crystallinity with the presence of MoSe2 nanoparticles in PVA. The bandgap calculated from UV–vis spectroscopy was 2.73 eV (1 wt%), 2.27 eV (3 wt%) and 2.19 eV (4 wt%). The quenching of photoluminescence (PL) spectra revealed an increase in trap states with the addition of MoSe2 while creating oxygen vacancies. FT-IR spectra showed the complete coverage of MoSe2 nanoparticles by PVA. FESEM showed the good dispersion of nanoparticles in the PVA matrix. The third-order non-linear susceptibility (χ(3)) was measured by the Z-scan technique and exhibited the presence of saturable and two-photon absorption phenomenon. An increase in χ(3) verified the rise of electron population density in trap states. The increase in non-linearity indicated the fabrication of a good non-volatile Ag/ MoSe2-PVA/FTO memory device. I-V and WRER cycles were used to examine the electrical switching in a two-terminal memory device. The Ion/Ioff ratio observed in endurance characteristics at 3 wt% concentration is ~9.28 × 102. The findings revealed the prospect of improving memory device performance using MoSe2/PVA PNCs by investigating the dynamics of linear, non-linear, and electrical responses in the material that are trap controlled.
NSTL
Elsevier
