首页|Features of hydrogen reduction of SiF4 in ICP plasma
Features of hydrogen reduction of SiF4 in ICP plasma
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Probe diagnostics is used to determine the electron temperature and electron number density in a low pressure inductively coupled plasma (ICP) ignited in the mixture of SiF4, Ar and H2. Emission spectra of mixtures with different stoichiometry of components are investigated and the electron density distribution function (EDDF) is estimated. The optimal conditions for high conversion of SiF4 into Si are found by studying the dependence of the yield of silicon upon the ratio of reagents. The maximum achieved yield of silicon is 85% under the optimal conditions. Based on the analysis of IR and MS spectra of exhaust gases, 5% of initial SiF4 converts into volatile fluorosilanes. A rate of production of Si is 0.9 g/h at the energy consumption 0.56 kWh /g.
Plasma enhanced chemical vapor depositionPECVDSilicon tetrafluorideEmission spectroscopyProbe diagnostics
I.B. Gornushkin、V.V. Nazarov、R.A. Kornev
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BAM Federal Institute for Materials Research and Testing Richard-Willstatter-Strasse 11, 12489 Berlin, Germany
Institute of Applied Physics of RAS, 46 Uliyanova Str, 603950 Nizhny Novgorod, Russia
G.G. Devyatykh Institute of Chemistry of High-Purity Substances of RAS, 49 Tropinin Str., Nizhny Novgorod 603951, Russia
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