首页|In situ loading of ZnIn2S4 nanosheets onto S doped g-C3N4 nanosheets to construct type II heterojunctions for improving photocatalytic hydrogen production
In situ loading of ZnIn2S4 nanosheets onto S doped g-C3N4 nanosheets to construct type II heterojunctions for improving photocatalytic hydrogen production
扫码查看
点击上方二维码区域，可以放大扫码查看
原文链接
NSTL
Elsevier
? 2022In this work, type II heterojunctions were constructed by in suit loading of ZnIn2S4 (ZIS) nanosheets onto S-doped g-C3N4 (SCN) nanosheets by a simple hydrothermal synthesis method. The formation of heterojunction induced rapid electron-hole separation, while the introduction of SCN reduced the internal resistance of photogenerated carriers to transfer. When the mass fraction of SCN was 20 %, the best photocatalytic hydrogen production performance was 1.63 mmol g?1 h?1 under visible light irradiation (λ > 420 nm), which was 7.7 and 2.8 times higher than SCN (0.21 mmol g?1 h?1) and ZIS (0.57 mmol g?1 h?1), respectively. The enhanced photocatalytic activity was mainly due to greater light utilization achieved by band gap adjustment through constructing heterojunctions and improved electron-hole separation efficiency. This method can effectively improve the photocatalytic performance of ZIS-based photocatalysts in a simple way.
Photocatalytic hydrogen production performanceS doped g-C3N4 nanosheetsType II heterojunctionZnIn2S4 nanosheets
Wang Y.、Li J.、Chen S.、Xie Y.、Ma Y.、Huang J.、Ling Y.、Ye J.、Liang Y.、Du J.、Luo Y.
展开 >
College of Environment and Chemical Engineering Nanchang Hangkong University
Jiangxi Key Laboratory of Advanced Materials and Applications for Solar Cells Xinyu University
NSTL
Elsevier
