首页|Broadband photodetector based on vertically stage-liked MoS2/Si heterostructure with ultra-high sensitivity and fast response speed
Broadband photodetector based on vertically stage-liked MoS2/Si heterostructure with ultra-high sensitivity and fast response speed
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NSTL
Elsevier
We report a broadband photodetector based on vertically stage-liked MoS2/Si heterostructure with MoS2 sheet modified using rapid annealing technique. The fabricated photodetector features a unique structure of naturally formed band alignment in MoS2 after annealing and shows an ultra-high responsivity up to 746 mA W-1 and detectivity up to 6.03 x 10(11) Jones ranging from 405 to 980 nm, as well exhibits a fast response speed with a rise time of similar to 178 mu s and fall time of similar to 198 mu s. The demonstrated superb photodetector suggests an effective way to form vertical p-n junction for improving the performances of future optoelectronic devices. (C) 2019 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
NSTL
Elsevier
