首页|(162969)Strain induced study on MoS_2 thin films due to ion and gamma irradiation
(162969)Strain induced study on MoS_2 thin films due to ion and gamma irradiation
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NSTL
Elsevier
Single step hydrothermal method was used to synthesize molybdenum disulfide (MoS_2) thin films. The hexagonal structure of MoS_2 was confirmed by X-ray diffraction techniques (XRD). The nanosheets like morphology of MoS_2 films were confirmed using scanning electron microscopy (SEM). The optical band gap of pristine MoS_2 was found to be -1.53 eV. The prepared MoS_2 films were irradiated with ion and gamma radiation at different ion fluence and doses respectively. For ion irradiation, the samples were irradiated at ion fluences of 4.7 × 10~(16) ion/cm~2, 7.1 × 10~(16) ion/cm~2, 9.5 × 10~(16) ion/cm~2,11.9 × 10~(16) ion/cm~2 and 14.3 × 10~(16) ion/cm~2. In case of gamma irradiation, the samples were irradiated for 10 kGy, 100 kGy, 300 kGy, and 500 kGy and 800 kGy doses. The tensile strain induced in the sample was studied with the help of Raman spectroscopy and XRD technique. The defect induced tensile strain in MoS_2 films due to ion irradiation is higher as compared to gamma irradiation.
NSTL
Elsevier
